标题: 24AA65,24LC65,24C65 Data Sheet [打印本页] 作者: admin 时间: 2010-4-24 11:17 标题: 24AA65,24LC65,24C65 Data Sheet 24AA65/24LC65/24C65 Data Sheet
The Microchip Technology Inc. 24AA65/24LC65/ 24C65 (24XX65)* is a “smart” 8K x 8 Serial Electrically Erasable PROM. This device has been developed for advanced, low-power applications such as personal communications, and provides the systems designer with flexibility through the use of many new user-programmable features. The 24XX65 offers a relocatable 4K bit block of ultra-high-endurance memory for data that changes frequently. The remainder of the array, or 60K bits, is rated at 1,000,000 erase/write (E/W) cycles ensured. The 24XX65 features an input cache for fast write loads with a capacity of eight pages, or 64 bytes. This device also features programmable security options for E/W protection of critical data and/or code of up to fifteen 4K blocks. Functional address lines allow the connection of up to eight 24XX65’s on the same bus for up to 512K bits contiguous EEPROM memory. Advanced CMOS technology makes this device ideal for low-power nonvolatile code and data applications. The 24XX65 is available in the standard 8-pin plastic DIP and 8-pin surface mount SOIJ package.
参数名称 数值
Density 64K bits (x8)
Max. Clock Freq. 400 kHz
Page Size (bytes) 8
Endurance 1M/10M
Op. Volt Range (V) 1.8 to 5.5
Temp Range (°C) 0°C to +70°C
特性
Voltage Operating Range: 1.8V to 6.0V
- Peak write current 3 mA at 6.0V
- Maximum read current 150 μA at 6.0V
- Standby current 1 μA, typical
Industry Standard Two-Wire Bus Protocol I2C™
Compatible
8-Byte Page, or Byte modes Available
2 ms Typical Write Cycle Time, Byte or Page
64-Byte Input Cache for Fast Write Loads
Up to 8 devices may be connected to the same
bus for up to 512K bits total memory
Including 100 kHz (1.8V ≤ Vcc < 4.5V) and 400
kHz (4.5V ≤ VCC ≤ 6.0V) Compatibility
Programmable Block Security Options
Programmable Endurance Options
Schmitt Trigger, Filtered Inputs for Noise
Suppression
Output Slope Control to Eliminate Ground Bounce
Self-Timed Erase and Write Cycles
Power-on/off Data Protection Circuitry
Endurance:
- 10,000,000 E/W cycles for a High Endurance
Block
- 1,000,000 E/W cycles for a Standard
Endurance Block
Electrostatic Discharge Protection > 4000V
Data Retention > 200 years
